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Publications

H. Walk, T. Theiler "The Wafer Temperature Measurement in Dual OH-Band Quartz Tube", Proc. of the 2nd Intern. Rapid Thermal Processing Conference (RTP´94), pp. 194-196, 31. August-2. September 1994, Monterey (CA)
H. Walk, M. Schäfer , M. Glück, U. König "New approaches to a simulation-assisted design and process development" , Solid State Technology, vol. 40, No.3, pp. S16-S18, März 1997
M. Glück, D. Behammer, M. Schäfer , H. Walk, U. König "2D Process and Device Simulation of Lateral and Vertical Si/SiGe High-Speed Devices", Proc. of the IEEE International Conference on Semiconductor Processes and Devices (SISPAD´97), pp. 197-200, 8.-10. September 1997, Boston (MA)
W. Lerch, M. Glück, N. A. Stolwijk , H. Walk, M. Schäfer , S. D. Marcus, D. F. Downey, J. W. Chow, H. Marquardt "Simulation of rapid thermal annealed boron ultra-shallow junctions in inert and oxidizing ambient" PDF (278k), Proc.of the Materials Research Society Spring Meeting, Vol. 525 of the Materials Research Society Symposium Proceedings Series, 13.-17. April 1998, San Francisco (CA)
D. Behammer, M. Zeuner, T. Hackbarth, J. Herzog, M. Schäfer , T. Grabolla "Comparisation of lateral and vertical Si-MOSFETs with ultra short channels", Thin Solid Films 336 (1998) 313-318
W. Lerch, N. A. Stolwijk, S. D. Marcus, D. F. Downey, M. Schäfer "Influence of thermal nitridation on the diffusion of arsenic during rapid thermal annealing" PDF (154k), Proc. of the 195th Meeting of The Electrochemical Society, Inc , Vol. 99-1, May 2-6, 1999, Seattle (WA)
H. Jorke, M. Schäfer , J.-F. Luy "Resonance Phase Transistor - Concepts and Perspectives" PDF (90k), IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 12.-14. Sept. 2001, Ann Arbor (MI)
P. Abele, F. Bourgeois, J. Splettstoesser, D. Behammer
"Influence of the Epitaxy on the Sub-Threshold Drain Leakage Current and the Breakdown Voltage for GaAs pHEMTs" PDF (237k), 2007 International Conference on Compound Semiconductor Manufacturing Technology, May 14 - 17, 2007
ACKNOWLEDGMENTS
The authors would like to thank M. Schaefer from CADwalk (www.cadwalk.de) and Dr. G. Zandler from Silvaco (www.silvaco.de) for performing and supporting the device simulations.
P. Abele, M. Schaefer, M. Hosch, J. Splettstoesser, and D. Behammer
"Improving the Breakdown Voltage for 100nm GaAs pHEMTs by the Support of Device Simulations" PDF (467k), 2008 International Conference on Compound Semiconductor Manufacturing Technology, April 14 - 17, 2008, Chicago, Illinois, USA

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