Publications |
| H. Walk, T. Theiler "The Wafer Temperature Measurement in Dual OH-Band Quartz Tube", Proc. of the 2nd Intern. Rapid Thermal Processing Conference (RTP´94), pp. 194-196, 31. August-2. September 1994, Monterey (CA) |
| H. Walk, M. Schäfer , M. Glück, U. König "New approaches to a simulation-assisted design and process development" , Solid State Technology, vol. 40, No.3, pp. S16-S18, März 1997 |
| M. Glück, D. Behammer, M. Schäfer , H. Walk, U. König "2D Process and Device Simulation of Lateral and Vertical Si/SiGe High-Speed Devices", Proc. of the IEEE International Conference on Semiconductor Processes and Devices (SISPAD´97), pp. 197-200, 8.-10. September 1997, Boston (MA) |
| W. Lerch, M. Glück, N. A. Stolwijk , H. Walk, M. Schäfer , S. D. Marcus, D. F. Downey, J. W. Chow, H. Marquardt "Simulation of rapid thermal annealed boron ultra-shallow junctions in inert and oxidizing ambient" PDF (278k), Proc.of the Materials Research Society Spring Meeting, Vol. 525 of the Materials Research Society Symposium Proceedings Series, 13.-17. April 1998, San Francisco (CA) |
| D. Behammer, M. Zeuner, T. Hackbarth, J. Herzog, M. Schäfer , T. Grabolla "Comparisation of lateral and vertical Si-MOSFETs with ultra short channels", Thin Solid Films 336 (1998) 313-318 |
| W. Lerch, N. A. Stolwijk, S. D. Marcus, D. F. Downey, M. Schäfer "Influence of thermal nitridation on the diffusion of arsenic during rapid thermal annealing" PDF (154k), Proc. of the 195th Meeting of The Electrochemical Society, Inc , Vol. 99-1, May 2-6, 1999, Seattle (WA) |
| H. Jorke, M. Schäfer , J.-F. Luy "Resonance Phase Transistor - Concepts and Perspectives" PDF (90k), IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 12.-14. Sept. 2001, Ann Arbor (MI) |
| P. Abele, F. Bourgeois, J. Splettstoesser, D. Behammer "Influence of the Epitaxy on the Sub-Threshold Drain Leakage Current and the Breakdown Voltage for GaAs pHEMTs" PDF (237k), 2007 International Conference on Compound Semiconductor Manufacturing Technology, May 14 - 17, 2007 ACKNOWLEDGMENTS The authors would like to thank M. Schaefer from CADwalk (www.cadwalk.de) and Dr. G. Zandler from Silvaco (www.silvaco.de) for performing and supporting the device simulations. |
| P. Abele, M. Schaefer, M. Hosch, J. Splettstoesser, and D. Behammer "Improving the Breakdown Voltage for 100nm GaAs pHEMTs by the Support of Device Simulations" PDF (467k), 2008 International Conference on Compound Semiconductor Manufacturing Technology, April 14 - 17, 2008, Chicago, Illinois, USA |
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