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Semiconductor Simulation Services


With Silvacos VIRTUAL WAFER FAB we're able to simulate:
devices with advanced materials (SiGe, GaAs, GaN or other ternary and quaternary materials). A direct impact of layer-, recess- or other modifications to the device behavior thus can easily be made visible.

Simulation Input:

Detailled device structure including (recess) dimensions, layer structure and doping profile.

Simulation Output:

- Input/output characteristic
- contour plots, e.g.
net doping,
electron concentration,
current density,
Net Doping Electron Concentration Current Density
e-field, hole concentration, potential from various working points
- Cutlines (e.g. band parameters), DC-analysis (e.g. threshold voltage,
transconductance, subthreshold voltage).
- AC-analysis (e.g. ft, fmax, S-parameters).
- transient analysis

Available models

A wide range of numerous models for all these materials are (among others)
available, e.g.
- Fermi-Dirac and Boltzmann statistics
- Drift-diffusion transport models
- Energy balance transport models (velocity overshoot is included)
- Field- and doping dependand mobility
- Graded and abrupt heterojunctions
- Bandgap Norrowing and high doping effects
- Shockley-Read-Hall, Auger-and surface recombination
- Hot carrier effects
For more detailled information about SiGe hetero-FET device simulation see our Solid State Technology-publication "New approaches to a simulation-assisted design and process development" (March 1997)