Semiconductor Device Simulation:

With Silvacos VIRTUAL WAFER FAB we’re able to simulate:

• MOSFET-
• MESFET-
• HBT-
• HEMT-

devices with advanced materials (SiGe, GaAs, GaN or other ternary and quaternary materials). A direct impact of layer-, recess- or other modifications to the device behavior thus can easily be made visible.

Simulation Input:
Detailled device structure including (recess) dimensions, layer structure and doping profile.

Simulation Output:
– Input/output characteristics
– contour plots, e.g.

or e-field, hole concentration, potential from various working points.

Further analysis:

• Cutlines (e.g. band parameters).
• DC-analysis (e.g. threshold voltage, transconductance, subthreshold voltage).
• AC-analysis (e.g. ft, fmax, S-parameters).
• Transient analysis

Available models:

A wide range of numerous models for all these materials are (among others) available, e.g.:

• Fermi-Dirac and Boltzmann statistics
• Drift-diffusion transport models
• Energy balance transport models (velocity overshoot is included)
• Field- and doping dependend mobility
• Graded and abrupt heterojunctions
• Bandgap Narrowing and high doping effects
• Shockley-Read-Hall, Auger-and surface recombination
• Hot carrier effects

For more detailled information about SiGe hetero-FET device simulation see our Solid State Technology-publication “New approaches to a simulation-assisted design and process development” (Vol. 40, Issue 3)